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 PHOTOMULTIPLIER TUBE
R3896
High QE Multialkali Photocathode New Electro-Optical Design 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
FEATURES
GHigh Sensitivity Luminous ................................................ 525 A/lm (Typ.) Radiant at 450nm (peak wavelength) ............. 90 mA/W (Typ.) at 633nm ............................................. 73 mA/W (Typ.) Quantum Efficiency at 260nm (peak wavelength) .................... 30 % (Typ.) at 633nm .................................................... 14 % (Typ.) GWide Spectral Response ......................... 185 nm to 900 nm GHigh Signal to Noise Ratio GNewly Designed Electro Optical Structure
APPLICATIONS
GBiomedical Analysis Blood Analyzer, Flow Cytometer, DNA Sequencer GEnvironmental Monitoring NOx Analyzer GSpectroscopy Fluorescence Spectrometer, Raman Spectrometer, UV-VIS Spectrometer GSemiconductor Industry Wafer Inspection, Particle Counter
Figure 2: Typical Spectral Response
100
TPMSB0049EB
CATHODE RADIANT SENSITIVITY R3896 R928
CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
10
Figure 1: Electro Optical Structure
LIGHT
QUANTUM EFFICIENCY
1
PHOTOELECTRON TRAJECTORIES GRID
GLASS BULB
0.1
ANODE
PHOTOCATHODE 1st DYNODE 2nd DYNODE
9th DYNODE
0.01 100 200 300 400 500 600 700 800 900 1000
WAVELENGTH (nm)
TPMSC0024EA
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R3896
SPECIFICATIONS
GENERAL
Parameter Description/Value 185 to 900 Spectral Response 450 Wavelength of Maximum Response MateriaI Multialkali Photocathode 8 x 24 Minimum Effective Area UV glass Window Material Structure Circular-cage Dynode 9 Number of Stages 4 Anode to Last Dynode Direct Interelectrode Anode to All Other 6 Capacitances Electrodes Base 11-pin base JEDEC No. B11-88 Weight Approx. 45 Operating Ambient Temperature -30 to +50 Storage Temperature -30 to +50 SuitabIe Socket E678-11A (Sold Separately) SuitabIe Socket Assembly E717-63 (Sold Separately) Unit nm nm -- mm -- -- -- pF pF -- g C C -- --
NOTES
A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: Red/White ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. D: The value is cathode output current when a blue filter (Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. E: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1:Voltage Distribution Ratio
Electrodes Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter Supply Between Anode and Cathode Voltage Between Anode and Last Dynode Average Anode Current A Value 1250 250 0.1 Unit V V mA
CHARACTERISTlCS (at 25 C)
Parameter at 254 nm Quantum at 450 nm Efficiency at 633 nm at 852 nm Luminous B Cathode at 254 nm Sensitivity at 450 nm Radiant at 633 nm at 852 nm Red/White Ratio C Blue Sensitivity Index D Anode Luminous E Sensitivity Gain E Anode Dark Current F (After 30 min Storage in Darkness) Anode Pulse Rise Time G Time Electron Transit Time H Response Transit Time Spread (TTS) I Anode Current Light Hysteresis Voltage Hysteresis Stability J Min. -- -- -- -- 475 -- -- -- -- -- -- 3000 -- -- -- -- -- -- -- Typ. 29.3 24.8 14.3 0.73 525 60 90 73 5.0 0.4 15 5000 9.5 x 106 10 2.2 22 1.2 0.1 1.0 Max. -- -- -- -- -- -- -- -- -- -- -- -- -- 50 -- -- -- -- -- Unit % % % % A/lm mA/W mA/W mA/W mA/W -- -- A/lm -- nA ns ns ns % %
F: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. G: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. H: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. I: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times J: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. li lmin. x 100 (%)
ANODE CURRENT
li
l max. l min. TIME
0
5
6
7 (minutes)
TPMSB0002EA
(1)Light Hysteresis The tube is operated at 750 V with an anode current of 1 A for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 A for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation.
Figure 3: Typical Temperature Characteristics of Dark Current (at 1000 V, after 30 min storage in darkness)
100
TPMSB0050EB
Figure 4: Anode Luminous Sensitivity and Gain Characteristics
105
TPMSB0051EB
108
TYPICAL GAIN
ANODE LUMINOUS SENSITIVITY (A/lm)
104
107
ANODE DARK CURRENT (nA)
10
103
TYPICAL ANODE SENSITIVITY
106
1
102
105
MINIMUM ANODE SENSITIVITY
101 104
0.1
100
103
0.01 -30
-20
-10
0
+10
+20
+30
+40
+50
10-1 500
700
1000
102 1500
TEMPERATURE (C)
SUPPLY VOLTAGE (V)
Figure 5: Typical Time Response
TPMSB0052EB
Figure 6: Typical Temperature Coefficient of Anode Sensitivity
+0.04
TPMSB0053EB
100
TRANSIT TIME
TEMPERATURE COEFFICIENT (C-1)
+0.03
+0.02
TIME (ns)
10
+0.01
0
-0.0013
-0.0025
RISE TIME
-0.01
1 500
-0.02
700
1000
1500
200
400
600
800
1000
SUPPLY VOLTAGE (V)
WAVELENGTH (nm)
GAIN
PHOTOMULTIPLIER TUBE R3896
Figure 7: Dimensional Outline and Basing Diagram (Unit: mm)
28.5 1.5 8 MIN. PHOTOCATHODE DY5 24 MIN. DY4 4 80 MAX. DY3 3 94 MAX. DY2 2 1 11 K DY6 6 DY7 8 DY8 9 DY9 10 P PHOTO CATHODE
5
7
49.0 2.5
DY1
DIRECTION OF LIGHT
Bottom View (Basing Diagram)
32.2 0.5
3.25 2.5 6.0 3.5
Cross Section
11 PIN BASE JEDEC No. B11-88
TPMSA0008EA TPMSA0009EB
Figure 8: Accessories (Unit: mm)
Socket E678-11A
49 38
Sold Separately
D Type Socket Assembly E717-63
5 33.0 0.3 3.5
PMT P R10 DY9 9 R9 DY8 DY7 8 R8 7 R7 DY6 DY5 6 R6 5 R5 31.0 0.5 HOUSING (INSULATOR) DY4 DY3 DY2 4 R4 3 R3 2 R2 DY1 K 1 R1 11 -HV AWG22 (VIOLET) R1 to R10 : 330 k C1 to C3 : 10 nF C1 C2 C3 SOCKET PIN No. 10 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK)
3.5
33
38.0 0.3 49.0 0.3 29.0 0.3
5
29
4
18
450 10
30.0 +0 -1
0.7
4
TACCA0064EA
POTTING COMPOUND
* Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
TACCA0002EH
Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard.
WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMS1013E04
JUL. 2006. IP


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